BSM180C12P2E202
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 204A MODULE
$720.00
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$560.00000
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Discover the BSM180C12P2E202 from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BSM180C12P2E202 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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