BSM200GA120DLCHOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 370A 1450W
$138.49
Available to order
Reference Price (USD)
10+
$121.29900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's BSM200GA120DLCHOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The BSM200GA120DLCHOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the BSM200GA120DLCHOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the BSM200GA120DLCHOSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 370 A
- Power - Max: 1450 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF600R12ME4B73BPSA2
Infineon Technologies
FZ1500R33HE3C1BPSA1
IXYS
MIXG240RF1200P-PC
Microchip Technology
APTGT150SK60T1G
Infineon Technologies
BSM75GB170DN2HOSA1
Infineon Technologies
BSM200GA170DLCHOSA1
IXYS
MID100-12A3
Infineon Technologies
FS35R12YT3BOMA1
onsemi
NXH400N100H4Q2F2SG
Infineon Technologies