BSM250D17P2E004
Rohm Semiconductor
Rohm Semiconductor
HALF BRIDGE MODULE CONSISTING OF
$1,180.80
Available to order
Reference Price (USD)
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$918.40000
Exquisite packaging
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The BSM250D17P2E004 by Rohm Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the BSM250D17P2E004 ensures consistent and dependable performance. Rohm Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 66mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
- Power - Max: 1800W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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