BSM300D12P3E005
Rohm Semiconductor
Rohm Semiconductor
SILICON CARBIDE POWER MODULE. B
$1,645.72
Available to order
Reference Price (USD)
1+
$1645.72000
500+
$1629.2628
1000+
$1612.8056
1500+
$1596.3484
2000+
$1579.8912
2500+
$1563.434
Exquisite packaging
Discount
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The BSM300D12P3E005 by Rohm Semiconductor is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSM300D12P3E005 offers superior functionality and longevity. Trust Rohm Semiconductor to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 1260W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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