BSM400D12P3G002
Rohm Semiconductor
Rohm Semiconductor
1200V, 358A, HALF BRIDGE, FULL S
$1,494.00
Available to order
Reference Price (USD)
1+
$1494.00000
500+
$1479.06
1000+
$1464.12
1500+
$1449.18
2000+
$1434.24
2500+
$1419.3
Exquisite packaging
Discount
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The BSM400D12P3G002 by Rohm Semiconductor is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSM400D12P3G002 offers superior functionality and longevity. Trust Rohm Semiconductor to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 109.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V
- Power - Max: 1570W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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