BSM50GD120DLCBPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2A-211
$231.86
Available to order
Reference Price (USD)
1+
$231.86000
500+
$229.5414
1000+
$227.2228
1500+
$224.9042
2000+
$222.5856
2500+
$220.267
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's BSM50GD120DLCBPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The BSM50GD120DLCBPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the BSM50GD120DLCBPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the BSM50GD120DLCBPSA1 IGBT module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
- Current - Collector Cutoff (Max): 84 µA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2A
Related Products
Microchip Technology
APTGT300A60D3G
Infineon Technologies
BSM25GP120BPSA1
Microchip Technology
APTGT300SK120G
Infineon Technologies
FF450R33T3E3P4BPMA1
Infineon Technologies
FP75R07N2E4BOSA1
IXYS
MIXG300PF1700TSF
Microchip Technology
APTGL700SK120D3G
Microchip Technology
APTGT200SK120G
Infineon Technologies
BSM200GB170DLCHOSA1
Microchip Technology