BSO615CT
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSO615CT by Infineon Technologies is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the BSO615CT offers superior functionality and longevity. Trust Infineon Technologies to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
- Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
Related Products
Infineon Technologies
IRF9953TR
Diodes Incorporated
BSS138DW-7
Diodes Incorporated
DMP57D5UV-7
onsemi
NTHD4401PT3
Diodes Incorporated
DMN5L06DW-7
Alpha & Omega Semiconductor Inc.
AO4806L
Diodes Incorporated
DMN5L06VK-7-79
Vishay Siliconix
SI7964DP-T1-E3
Vishay Siliconix
SI5504DC-T1-GE3
Infineon Technologies