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BSP372NH6327XTSA1

Infineon Technologies
BSP372NH6327XTSA1 Preview
Infineon Technologies
MOSFET N-CH 100V 1.8A SOT223-4
$1.01
Available to order
Reference Price (USD)
1,000+
$0.38513
2,000+
$0.35254
5,000+
$0.33081
10,000+
$0.31995
25,000+
$0.31403
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 218µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA

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