BSP52,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT223
$0.63
Available to order
Reference Price (USD)
1,000+
$0.26774
2,000+
$0.24714
5,000+
$0.23341
10,000+
$0.22655
Exquisite packaging
Discount
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Experience unmatched performance with the BSP52,115 Bipolar Junction Transistor (BJT) by Nexperia USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BSP52,115 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Nexperia USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.25 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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