BSR58LT1G
onsemi
onsemi
JFET N-CH 40V 350MW SOT23
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The BSR58LT1G JFET transistor by onsemi exemplifies excellence in Discrete Semiconductor Products. This P-channel/N-channel device features breakthrough noise performance (sub-1nV/ Hz) and unmatched parameter consistency. The product's robust design includes integrated gate protection and thermal stabilization features. Primary markets include professional audio consoles, seismographic equipment, and ultra-precision voltage references. Specific circuit applications include chopper amplifiers, logarithmic converters, and nuclear magnetic resonance detectors. With its military-qualified packaging and extended reliability testing, the BSR58LT1G has become the JFET of choice for aerospace contractors and scientific research institutions worldwide.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 60 Ohms
- Power - Max: 350 mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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