BSS119NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.11393
6,000+
$0.10815
15,000+
$0.09949
30,000+
$0.09371
75,000+
$0.08505
Exquisite packaging
Discount
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Upgrade your designs with the BSS119NH6327XTSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSS119NH6327XTSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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