BSS119NH7796
Infineon Technologies
Infineon Technologies
SMALL SIGNAL N-CHANNEL MOSFET
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the BSS119NH7796 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The BSS119NH7796 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Microsemi Corporation
APT6017LFLLG
Infineon Technologies
IPA040N06NXKSA1
Nexperia USA Inc.
BSS84AKQBZ
Fairchild Semiconductor
FDS4770
Wolfspeed, Inc.
C3M0075120J
Alpha & Omega Semiconductor Inc.
AON6444
Vishay Siliconix
IRF840STRRPBF
IXYS
IXTH76P10T
Rohm Semiconductor
RQ5E025ATTCL
Renesas Electronics America Inc