BSS138AKAR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 200MA TO236AB
$0.34
Available to order
Reference Price (USD)
3,000+
$0.06255
6,000+
$0.05513
15,000+
$0.04770
30,000+
$0.04523
75,000+
$0.04275
150,000+
$0.03780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSS138AKAR by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSS138AKAR is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta), 1.06W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
STMicroelectronics
STL45N60DM6
Diodes Incorporated
DMP3165L-7
Vishay Siliconix
SUD19N20-90-BE3
Infineon Technologies
IRF5305STRRPBF
onsemi
NVGS4111PT1G
Nexperia USA Inc.
PMV30UN2R
Sanken
FKP202
Vishay Siliconix
SQJ840EP-T1_GE3
Nexperia USA Inc.
PHB33NQ20T,118
Fairchild Semiconductor