BSS159NH6327XTSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
$0.59
Available to order
Reference Price (USD)
3,000+
$0.17303
6,000+
$0.16354
15,000+
$0.15405
30,000+
$0.14265
75,000+
$0.13791
Exquisite packaging
Discount
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The BSS159NH6327XTSA2 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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