BSS192,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 240V 200MA SOT89
$0.61
Available to order
Reference Price (USD)
1,000+
$0.25440
2,000+
$0.23460
5,000+
$0.22140
10,000+
$0.20820
25,000+
$0.19896
50,000+
$0.19800
Exquisite packaging
Discount
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The BSS192,115 by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSS192,115 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560mW (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89
- Package / Case: TO-243AA
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