BSS670S2LH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 540MA SOT23-3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.07768
6,000+
$0.07053
15,000+
$0.06338
30,000+
$0.05980
75,000+
$0.05372
150,000+
$0.05194
Exquisite packaging
Discount
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Optimize your power electronics with the BSS670S2LH6327XTSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSS670S2LH6327XTSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 2.7µA
- Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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