BSS806NEH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 2.3A SOT23-3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.10308
6,000+
$0.09785
15,000+
$0.09001
30,000+
$0.08479
75,000+
$0.07695
150,000+
$0.07553
Exquisite packaging
Discount
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The BSS806NEH6327XTSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSS806NEH6327XTSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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