BSS806NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 2.3A SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.10308
6,000+
$0.09785
15,000+
$0.09001
30,000+
$0.08479
75,000+
$0.07695
150,000+
$0.07553
Exquisite packaging
Discount
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Enhance your electronic projects with the BSS806NH6327XTSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSS806NH6327XTSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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