BST51,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS NPN DARL 60V 1A SOT89
$0.71
Available to order
Reference Price (USD)
1,000+
$0.30155
2,000+
$0.27710
5,000+
$0.26895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BST51,115 Bipolar Junction Transistor (BJT) by Nexperia USA Inc. is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BST51,115 provides consistent performance in demanding applications. Choose Nexperia USA Inc. for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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