BSV52LT1G
onsemi
onsemi
TRANS NPN 12V 0.1A SOT23-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.04835
6,000+
$0.04227
15,000+
$0.03619
30,000+
$0.03416
75,000+
$0.03213
150,000+
$0.02876
Exquisite packaging
Discount
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Discover the BSV52LT1G Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BSV52LT1G is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 225 mW
- Frequency - Transition: 400MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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