BSZ0602LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 13A/40A TSDSON
$1.94
Available to order
Reference Price (USD)
1+
$1.94000
500+
$1.9206
1000+
$1.9012
1500+
$1.8818
2000+
$1.8624
2500+
$1.843
Exquisite packaging
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Optimize your power electronics with the BSZ0602LSATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSZ0602LSATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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