BSZ520N15NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 21A 8TSDSON
$1.93
Available to order
Reference Price (USD)
5,000+
$0.58608
10,000+
$0.56405
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BSZ520N15NS3GATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BSZ520N15NS3GATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTD5865NLT4G
Vishay Siliconix
SIHB23N60E-GE3
Nexperia USA Inc.
PSMN4R5-40BS,118
Diodes Incorporated
DMN1054UCB4-7
Vishay Siliconix
SI3430DV-T1-BE3
Vishay Siliconix
IRLR014TRPBF
onsemi
MCH6421-TL-E
Microchip Technology
APT10050B2VFRG
Fairchild Semiconductor
FQD16N15TM
STMicroelectronics