BTS244ZE3062AATMA1
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$2.64
Available to order
Reference Price (USD)
1+
$2.64000
500+
$2.6136
1000+
$2.5872
1500+
$2.5608
2000+
$2.5344
2500+
$2.508
Exquisite packaging
Discount
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Upgrade your designs with the BTS244ZE3062AATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BTS244ZE3062AATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5-2
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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