BTS282ZE3180AATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 49V 80A TO263-7
$7.25
Available to order
Reference Price (USD)
1,000+
$2.97605
2,000+
$2.82725
Exquisite packaging
Discount
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The BTS282ZE3180AATMA2 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the BTS282ZE3180AATMA2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 49 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 2V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-1
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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