BUJ106A,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ106A - POWER BIPOL
$0.47
Available to order
Reference Price (USD)
5,000+
$0.39200
Exquisite packaging
Discount
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The BUJ106A,127 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BUJ106A,127 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BUJ106A,127 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1.2A, 6A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 500mA, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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