BUJ303B,127
NXP USA Inc.
NXP USA Inc.
NOW WEEN - BUJ303B - POWER BIPOL
$0.36
Available to order
Reference Price (USD)
5,000+
$0.31185
Exquisite packaging
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Discover the BUJ303B,127 Bipolar Junction Transistor (BJT) from NXP USA Inc., a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BUJ303B,127 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NXP USA Inc. for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 23 @ 800mA, 3V
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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