BUK664R4-55C,118
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK664R4 - N-CHANNEL T
$0.58
Available to order
Reference Price (USD)
800+
$0.80125
1,600+
$0.72402
2,400+
$0.67575
5,600+
$0.64196
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK664R4-55C,118 from NXP Semiconductors redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK664R4-55C,118 offers the precision and reliability you need. Trust NXP Semiconductors to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 204W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STL57N65M5
STMicroelectronics
STB40N60M2
Vishay Siliconix
SI1302DL-T1-E3
Toshiba Semiconductor and Storage
SSM3J35CTC,L3F
Vishay Siliconix
IRFL9110TRPBF
Rohm Semiconductor
R6520KNJTL
onsemi
NTBLS4D0N15MC
Rohm Semiconductor
SCT3080KRC14
Vishay Siliconix
SIJ438ADP-T1-GE3
Infineon Technologies