BUK7108-40AIE,118
NXP USA Inc.
NXP USA Inc.
PFET, 75A I(D), 40V, 0.008OHM, 1
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
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Enhance your electronic projects with the BUK7108-40AIE,118 single MOSFET from NXP USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust NXP USA Inc.'s BUK7108-40AIE,118 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
- FET Feature: Current Sensing
- Power Dissipation (Max): 221W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-426
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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