BUK762R6-40E,118
NXP Semiconductors
NXP Semiconductors
NOW NEXPERIA BUK762R6-40E 100A,
$1.01
Available to order
Reference Price (USD)
800+
$1.13318
1,600+
$1.03994
2,400+
$0.96822
5,600+
$0.93236
Exquisite packaging
Discount
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The BUK762R6-40E,118 from NXP Semiconductors redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK762R6-40E,118 offers the precision and reliability you need. Trust NXP Semiconductors to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7130 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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