BUK763R9-60E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 100A D2PAK
$0.92
Available to order
Reference Price (USD)
800+
$0.82170
1,600+
$0.74250
2,400+
$0.69300
5,600+
$0.65835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK763R9-60E,118 by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Panjit International Inc.
PJD4NA60_R2_00001
Nexperia USA Inc.
PSMN2R1-40PLQ
Diodes Incorporated
DMT6017LSS-13
Panjit International Inc.
2N7002K_R1_00001
Toshiba Semiconductor and Storage
TK100S04N1L,LQ
Vishay Siliconix
IRFI740GPBF
IXYS
IXTT110N10P
Vishay Siliconix
SQD30N05-20L_GE3
Infineon Technologies
AUIRFN7107TR
Toshiba Semiconductor and Storage