BUK7660-100A,118
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK7660 - N-CHANNEL TRE
$0.55
Available to order
Reference Price (USD)
800+
$0.51310
1,600+
$0.46365
2,400+
$0.43274
5,600+
$0.41110
20,000+
$0.39565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the BUK7660-100A,118 single MOSFET from NXP Semiconductors. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the BUK7660-100A,118 combines cutting-edge technology with NXP Semiconductors's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 106W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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