BUK964R1-40E,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 75A D2PAK
$2.11
Available to order
Reference Price (USD)
800+
$0.86881
1,600+
$0.78507
2,400+
$0.73273
5,600+
$0.69609
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK964R1-40E,118 by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52.1 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
NTE Electronics, Inc
NTE2371
Infineon Technologies
BSS314PEH6327XTSA1
Toshiba Semiconductor and Storage
TK49N65W5,S1F
Harris Corporation
RF1S9540
Infineon Technologies
IPD100N04S4L02ATMA1
onsemi
FDS6576
Infineon Technologies
IPB600N25N3GATMA1
Microchip Technology
APT34M120J
onsemi
NTMFS5C612NLWFT1G
Diodes Incorporated