BUK9E08-55B,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK9E08-55B - 75A, 55V,
$0.51
Available to order
Reference Price (USD)
1+
$1.72000
50+
$1.37500
100+
$1.20300
500+
$0.93298
1,000+
$0.73656
Exquisite packaging
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Discover the BUK9E08-55B,127 from NXP Semiconductors, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BUK9E08-55B,127 ensures reliable performance in demanding environments. Upgrade your circuit designs with NXP Semiconductors's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 203W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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