BUK9Y4R8-60E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
$2.10
Available to order
Reference Price (USD)
1,500+
$0.70950
3,000+
$0.66220
7,500+
$0.62909
10,500+
$0.60544
Exquisite packaging
Discount
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Discover the BUK9Y4R8-60E,115 from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the BUK9Y4R8-60E,115 ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 7853 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 238W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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