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BYG10J-E3/TR

Vishay General Semiconductor - Diodes Division
BYG10J-E3/TR Preview
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A
$0.41
Available to order
Reference Price (USD)
1,800+
$0.11214
3,600+
$0.10279
5,400+
$0.09656
12,600+
$0.09033
45,000+
$0.08722
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 µs
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

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