BYG10M-E3/TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.41
Available to order
Reference Price (USD)
1,800+
$0.12647
3,600+
$0.11712
5,400+
$0.11089
12,600+
$0.10466
45,000+
$0.10155
Exquisite packaging
Discount
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The BYG10M-E3/TR by Vishay General Semiconductor - Diodes Division is a top-tier single rectifier diode designed for high-efficiency power conversion. Belonging to the Diodes - Rectifiers - Single category, it features ultra-fast recovery times and minimal power dissipation, making it perfect for switch-mode power supplies and DC-DC converters. Its versatile applications span industrial motor drives, solar inverters, and consumer electronics, where consistent performance is essential. Engineered for durability, the BYG10M-E3/TR ensures long-term reliability even in harsh operating conditions. Trust Vishay General Semiconductor - Diodes Division for cutting-edge semiconductor solutions that drive innovation.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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