BYG23M-E3/TR3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.47
Available to order
Reference Price (USD)
7,500+
$0.12442
15,000+
$0.11743
37,500+
$0.11394
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BYG23M-E3/TR3 single rectifier diode by Vishay General Semiconductor - Diodes Division, a key component in the Diodes - Rectifiers - Single classification. This diode excels in providing stable and efficient rectification for circuits requiring precise voltage control. With its high surge current capability and low leakage, it is perfect for use in power management systems, LED drivers, and battery chargers. The BYG23M-E3/TR3 is widely utilized in telecommunications, renewable energy systems, and medical devices, ensuring reliable operation under varying load conditions. Choose Vishay General Semiconductor - Diodes Division's BYG23M-E3/TR3 for unmatched quality and performance in discrete semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
ES1A-E3/61T
Vishay General Semiconductor - Diodes Division
VS-6FR120
onsemi
BAS16HT1H
Vishay General Semiconductor - Diodes Division
SS2P6-M3/84A
Vishay General Semiconductor - Diodes Division
SE20DDHM3/I
Solid State Inc.
1N248RA
Vishay General Semiconductor - Diodes Division
BYV26A-TR
NTE Electronics, Inc
NTE6154
Microchip Technology
JAN1N5622US/TR
Vishay General Semiconductor - Diodes Division