BYG24J-M3/TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A
$0.12
Available to order
Reference Price (USD)
12,600+
$0.10745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYG24J-M3/TR from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's BYG24J-M3/TR for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Comchip Technology
SB560ET-G
Toshiba Semiconductor and Storage
CTS521,L3F
Microchip Technology
1N5623
Panjit International Inc.
PG101R_R2_00001
Solid State Inc.
MUR2515
Taiwan Semiconductor Corporation
HS1J
Vishay General Semiconductor - Diodes Division
VS-SD823C20S20C
Rectron USA
R4000
Vishay General Semiconductor - Diodes Division
VS-HFA04TB60SR-M3
Vishay General Semiconductor - Diodes Division