BYM10-200HE3/96
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
6,000+
$0.14667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYM10-200HE3/96 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The BYM10-200HE3/96 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the BYM10-200HE3/96 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Taiwan Semiconductor Corporation
S2KA
Solid State Inc.
85HFR05
Microchip Technology
UPR10/TR7
Nexperia USA Inc.
PMEG6045ETP-QX
Diodes Incorporated
B260A-13-F
Vishay General Semiconductor - Diodes Division
ES3AHE3_A/I
Vishay General Semiconductor - Diodes Division
VS-8TQ100STRR-M3
Panjit International Inc.
GV804B_R2_00001
Vishay General Semiconductor - Diodes Division
S5A-M3/57T
Micro Commercial Co