Shopping cart

Subtotal: $0.00

BYM11-600-E3/97

Vishay General Semiconductor - Diodes Division
BYM11-600-E3/97 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO213AB
$0.46
Available to order
Reference Price (USD)
5,000+
$0.09724
10,000+
$0.08866
25,000+
$0.08294
50,000+
$0.08008
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-8EWF04STRL-M3

Vishay General Semiconductor - Diodes Division

V10PN50-M3/86A

Rohm Semiconductor

SCS206AJTLL

Vishay General Semiconductor - Diodes Division

S5D-M3/57T

Vishay General Semiconductor - Diodes Division

IMBD4148-E3-18

Microchip Technology

JAN1N6642US

Nexperia USA Inc.

PMBD6050,235

Diotec Semiconductor

SK115

Vishay General Semiconductor - Diodes Division

RS3DHE3_A/I

Top