BYM11-800-E3/97
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
$0.13
Available to order
Reference Price (USD)
1+
$0.12837
500+
$0.1270863
1000+
$0.1258026
1500+
$0.1245189
2000+
$0.1232352
2500+
$0.1219515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BYM11-800-E3/97 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The BYM11-800-E3/97 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the BYM11-800-E3/97 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Rohm Semiconductor
RB461FT106
Vishay General Semiconductor - Diodes Division
B130-E3/61T
Comchip Technology
CDSU4148-HF
Diotec Semiconductor
SK1030D1
Renesas Electronics America Inc
1N4737AT9-E
Rohm Semiconductor
RBR1VWM40ATFTR
Vishay General Semiconductor - Diodes Division
VS-25F80M
Microchip Technology
JANTXV1N4454UR-1/TR
Microchip Technology
CDLL483B
Rohm Semiconductor