BZT52B10-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 410MW SOD123
$0.05
Available to order
Reference Price (USD)
1+
$0.04525
500+
$0.0447975
1000+
$0.044345
1500+
$0.0438925
2000+
$0.04344
2500+
$0.0429875
Exquisite packaging
Discount
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The BZT52B10-HE3-18 by Vishay General Semiconductor - Diodes Division is a high-performance single Zener diode, part of the Discrete Semiconductor Products lineup. Designed for accuracy and reliability, this diode features low dynamic impedance and excellent temperature stability. It is widely used in voltage reference circuits, power supplies, and signal conditioning applications. For instance, the BZT52B10-HE3-18 is essential in medical imaging devices, where it maintains precise voltage levels for accurate diagnostics. It also plays a critical role in aerospace electronics, ensuring reliable operation under extreme conditions. Furthermore, it is used in consumer electronics, such as smart TVs and home appliances, to enhance performance and longevity.
Specifications
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 10 V
- Tolerance: ±2%
- Power - Max: 410 mW
- Impedance (Max) (Zzt): 5.2 Ohms
- Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
- Voltage - Forward (Vf) (Max) @ If: -
- Operating Temperature: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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