Shopping cart

Subtotal: $0.00

C3M0060065J

Wolfspeed, Inc.
C3M0060065J Preview
Wolfspeed, Inc.
SICFET N-CH 650V 36A TO263-7
$14.91
Available to order
Reference Price (USD)
1+
$14.91000
500+
$14.7609
1000+
$14.6118
1500+
$14.4627
2000+
$14.3136
2500+
$14.1645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
  • Vgs (Max): +15V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Related Products

Toshiba Semiconductor and Storage

SSM5N15FU,LF

Infineon Technologies

IPP80R1K2P7

Infineon Technologies

SPP03N60C3

Infineon Technologies

IPD031N03LGATMA1

Infineon Technologies

BSZ050N03LSGATMA1

Nexperia USA Inc.

PSMN4R0-30YL,115

Infineon Technologies

IRFU3410PBF

Microchip Technology

LND150N3-G-P002

STMicroelectronics

STU6N62K3

Top