C4H2327N110AZ
Ampleon USA Inc.
Ampleon USA Inc.
C4H2327N110AZ/DFN 6.5X7.0/REELDP
$47.35
Available to order
Reference Price (USD)
1+
$47.35000
500+
$46.8765
1000+
$46.403
1500+
$45.9295
2000+
$45.456
2500+
$44.9825
Exquisite packaging
Discount
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The C4H2327N110AZ from Ampleon USA Inc. is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the C4H2327N110AZ is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Ampleon USA Inc.'s expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 15dB
- Voltage - Test: -
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 50 V
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (7x6.5)
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