C4H2327N55PZ
Ampleon USA Inc.
Ampleon USA Inc.
C4H2327N55PZ/DFN-7X6.5-6-1/REELD
$42.26
Available to order
Reference Price (USD)
1+
$42.26000
500+
$41.8374
1000+
$41.4148
1500+
$40.9922
2000+
$40.5696
2500+
$40.147
Exquisite packaging
Discount
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Meet the C4H2327N55PZ, a state-of-the-art RF MOSFET transistor from Ampleon USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The C4H2327N55PZ combines cutting-edge semiconductor technology with Ampleon USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the C4H2327N55PZ into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: GaN
- Frequency: 2.3GHz ~ 2.69GHz
- Gain: 19.6dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 30 mA
- Power - Output: 50W
- Voltage - Rated: 150 V
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (7x6.5)
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