CA3127ER2323
Harris Corporation
Harris Corporation
HIGH FREQUENCY NPN TRANSISTOR AR
$1.85
Available to order
Reference Price (USD)
1+
$1.85000
500+
$1.8315
1000+
$1.813
1500+
$1.7945
2000+
$1.776
2500+
$1.7575
Exquisite packaging
Discount
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Upgrade your electronic designs with the CA3127ER2323 Bipolar Junction Transistor (BJT) by Harris Corporation. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the CA3127ER2323 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Harris Corporation for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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