CA3127M
Renesas Electronics America Inc

Renesas Electronics America Inc
RF TRANS 5NPN 15V 1.15GHZ 16SOIC
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Discover the CA3127M, a cutting-edge RF Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The CA3127M features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Renesas Electronics America Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.15GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
- Gain: 27dB ~ 30dB
- Power - Max: 85mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC