CAB006M12GM3
Wolfspeed, Inc.
Wolfspeed, Inc.
1200V 2B HALF-BRIDGE
$315.24
Available to order
Reference Price (USD)
1+
$315.24000
500+
$312.0876
1000+
$308.9352
1500+
$305.7828
2000+
$302.6304
2500+
$299.478
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the CAB006M12GM3, a premium Transistors - FETs, MOSFETs - Arrays product from Wolfspeed, Inc.. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the CAB006M12GM3 delivers consistent and reliable operation. Wolfspeed, Inc.'s dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 69mA
- Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 20.4nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Related Products
Diodes Incorporated
DMC31D5UDJ-7B
onsemi
ECH8654-TL-H
STMicroelectronics
STL50DN6F7
Diodes Incorporated
ZXMN3F31DN8TA
Vishay Siliconix
SIZF920DT-T1-GE3
onsemi
NVMFD6H840NLWFT1G
Infineon Technologies
IPG20N06S4L26AATMA1
onsemi
NTMD2C02R2G
onsemi
NTJD5121NT2G
Rohm Semiconductor