CDBJSC3650-G
Comchip Technology
Comchip Technology
DIODE, SIC STKY 3A 650V TO-220-2
$1.70
Available to order
Reference Price (USD)
1+
$1.55000
10+
$1.40000
50+
$1.25000
100+
$1.12500
250+
$1.00000
500+
$0.87500
1,000+
$0.72500
2,500+
$0.67500
5,000+
$0.65000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CDBJSC3650-G from Comchip Technology is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Comchip Technology's dedication to quality means the CDBJSC3650-G meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 190pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
Vishay General Semiconductor - Diodes Division
UF5407-E3/54
onsemi
MUR160RLG
Global Power Technology-GPT
G3S12005A
Vishay General Semiconductor - Diodes Division
MBR1660-E3/45
Yangzhou Yangjie Electronic Technology Co.,Ltd
E1J-F1-0001HF
Panjit International Inc.
UF304G_R2_00001
Panjit International Inc.
MBR1080F_T0_00001
Toshiba Semiconductor and Storage
CUS05F30,H3F
Microchip Technology
MSC010SDA070B
onsemi