CLF1G0035S-100
NXP USA Inc.
NXP USA Inc.
RF POWER FIELD-EFFECT TRANSISTOR
$202.89
Available to order
Reference Price (USD)
1+
$202.89000
500+
$200.8611
1000+
$198.8322
1500+
$196.8033
2000+
$194.7744
2500+
$192.7455
Exquisite packaging
Discount
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The CLF1G0035S-100 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the CLF1G0035S-100 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of CLF1G0035S-100 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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